NOVELTY - The method (370) involves transferring a substrate to a processing region within a processing chamber (371). A silicon nitride layer is deposited on the substrate, where a silicon nitride material is deposited on components within the chamber during deposition of the silicon nitride layer on the substrate. The substrate is transferred (373) from the processing region. A silicon oxide layer is deposited over the silicon nitride layer deposited on the components within the chamber when the substrate is absent from the processing region. The chamber is placed within an in-line processing system.    USE - Method for reducing flaking particle from in-line coating chambers i.e. semiconductor processing chambers, in an in-line processing system.    ADVANTAGE - The method enables simultaneously transferring the substrates in a vacuum or inert environment through a high throughput substrate processing system to prevent substrate contamination and improve substrate throughput. The method enables reducing flaking particle from the in-line coating chambers in the in-line processing system in an effective manner.    DETAILED DESCRIPTION - The substrate is a solar cell. The processing chamber is selected from a group consisting of plasma enhanced chemical vapor deposition (PECVD) chamber, low pressure chemical vapor deposition (LPCVD) chamber, atomic layer deposition (ALD) chamber, plasma enhanced atomic layer deposition chamber (PEALD), physical vapor deposition (PVD) chamber, thermal processing chamber e.g. RTA chamber and RTO chamber, and substrate reorientation chamber i.e. flipping chamber.    DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for controlling particle flaking.    Method for reducing flaking from chamber components (370)    Step for transferring substrate to processing region within processing chamber (371)    Step for introducing silicon-containing gas and nitrogen-containing gas to processing region (372)    Step for transferring substrate from processing region (373)    Step for introducing silicon-containing gas and oxygen-containing gas to process region (374)