TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Particle: In the nanocrystal particle, the halogen element comprises fluorine. The first semiconductor nanocrystal of the core comprises a metal selected from a Group II metal, a Group III metal, a Group IV metal, and a combination, and where the crystalline or amorphous material of the shell comprises at least one metal which is different from the metal included in the first semiconductor nanocrystal and which is selected from a Group I metal, a Group II metal, a Group III metal, a Group IV metal, and a combination. The halogen element is included in a region selected the core, the shell, an interface between the core and the shell, and a combination. The shell is a multi-layered shell comprising an inner shell, an outer shell on the inner shell, a first interface between the core and the inner shell, and a second interface between the inner shell and the outer shell, each comprising a composition different from one another and where each is independently crystalline or amorphous, and where the halogen element is included in a region selected from the core, the inner shell, the outer shell, the first interface, and the second interface, and a combination. The halogen element is included in an amount of greater than or equal to 0.05 mol.%, based on the molar amount of the metal included in the core of the nanoparticle. The first semiconductor nanocrystal comprises a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, and a Group IV compound, or a combination, and where the crystalline or amorphous material comprises a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV compound, a halogen compound comprising a metal and a halogen, a metal oxide, or a combination. The crystalline or amorphous material of the shell comprises at least one metal which is different from the metal included in the first semiconductor nanocrystal. The Group II-VI compound is selected from: a binary element compound selected from cadmium selenide (CdSe), cadmium telluride (CdTe), zinc sulfide (ZnS), zinc selenide (ZnSe), zinc telluride (ZnTe), zinc oxide (ZnO), mercury sulfide (HgS), mercury selenide (HgSe), mercury telluride (HgTe), magnesium selenide (MgSe), magnesium sulfide (MgS), and a combination; a ternary element compound selected from cadmium selenide sulfide (CdSeS), cadmium selenide telluride (CdSeTe), cadmium sulfide telluride (CdSTe), zinc selenide sulfide (ZnSeS), zinc selenide telluride (ZnSeTe), zinc sulfide telluride (ZnSTe), mercury selenide sulfide (HgSeS), mercury selenide telluride (HgSeTe), mercury sulfide telluride (HgSTe), cadmium zinc sulfide (CdZnS), cadmium zinc selenide (CdZnSe), cadmium zinc telluride (CdZnTe), cadmium mercury sulfide (CdHgS), cadmium mercury selenide (CdHgSe), cadmium mercury telluride (CdHgTe), mercury zinc sulfide (HgZnS), mercury zinc selenide (HgZnSe), mercury zinc telluride (HgZnTe), magnesium zinc selenide (MgZnSe), magnesium zinc sulfide (MgZnS), and a combination; and a quaternary element compound selected from mercury zinc telluride sulfide (HgZnTeS), cadmium zinc selenide sulfide (CdZnSeS), cadmium zinc selenide telluride (CdZnSeTe), cadmium zinc sulfide telluride (CdZnSTe), cadmium mercury selenide sulfide (CdHgSeS), cadmium mercury selenide telluride (CdHgSeTe), cadmium mercury sulfide telluride (CdHgSTe), mercury zinc selenide sulfide (HgZnSeS), mercury zinc selenide telluride (HgZnSeTe), mercury zinc sulfide telluride (HgZnSTe), and a combination, and where the Group III-V compound is selected from: a binary element compound selected from gallium nitride (GaN), gallium phosphide (GaP), gallium arsenide (GaAs), gallium antimonide (GaSb), aluminum nitride (AlN), aluminum phosphide (AlP), aluminum arsenide (AlAs), aluminum antimonide (AlSb), indium nitride (InN), indium phosphide (InP), indium arsenide (InAs), indium antimonide (InSb), and a combination; a ternary element compound selected from gallium nitride phosphide (GaNP), gallium nitride arsenide (GaNAs), gallium nitride antimonide (GaNSb), gallium phosphide arsenide (GaPAs), gallium phosphide antimonide (GaPSb), aluminum nitride phosphide (AlNP), aluminum nitride arsenide (AlNAs), aluminum nitride antimonide (AlNSb), aluminum phosphide arsenide (AlPAs), aluminum phosphide antimonide (AlPSb), indium nitride phosphide (InNP), indium nitride arsenide (InNAs), indium nitride antimonide (InNSb), indium phosphide arsenide (InPAs), indium phosphide antimonide (InPSb), and a combination; and a quaternary element compound selected from gallium nitride phosphide (GaAlNP), gallium aluminum nitride arsenide (GaAlNAs), gallium aluminum nitride antimonide (GaAlNSb), gallium aluminum phosphide arsenide (GaAlPAs), gallium aluminum phosphide antimonide (GaAlPSb), gallium indium nitride phosphide (GaInNP), gallium indium nitride arsenide (GaInNAs), gallium indium nitride antimonide (GaInNSb), gallium indium phosphide arsenide (GaInPAs), gallium indium phosphide antimonide (GaInPSb), indium aluminum nitride phosphide (InAlNP), indium aluminum nitride arsenide (InAlNAs), indium aluminum nitride antimonide (InAlNSb), indium aluminum phosphide arsenide (InAlPAs), indium aluminum phosphide antimonide (InAlPSb), and a combination, and where the Group IV-VI compound is selected from: a binary element compound selected from tin sulfide (SnS), tin selenide (SnSe), tin telluride (SnTe), lead sulfide (PbS), lead selenide (PbSe), lead telluride (PbTe), and a combination; a ternary element compound selected from tin selenide sulfide (SnSeS), tin selenide telluride (SnSeTe), tin sulfide telluride (SnSTe), lead selenide sulfide (PbSeS), lead selenide telluride (PbSeTe), lead sulfide telluride (PbSTe), tin lead sulfide (SnPbS), tin lead selenide (SnPbSe), tin lead telluride (SnPbTe), and a combination; and a quaternary element compound selected from tin lead sulfide selenide (SnPbSSe), tin lead selenide telluride (SnPbSeTe), tin lead sulfide telluride (SnPbSTe), and a combination, and where the Group IV compound is selected from: a singular element selected from silicon (Si), germanium (Ge), and a combination; and a binary element compound selected from silicon carbide (SiC), silicon germanium (SiGe), and a combination, and where the halogen compound is selected from lithium fluoride (LiF), sodium fluoride (NaF), potassium fluoride (KF), beryllium fluoride (BeF2), magnesium fluoride (MgF2), calcium fluoride (CaF2), strontium fluoride (SrF2), copper fluoride (CuF), silver fluoride (AgF), gold fluoride (AuF), zinc fluoride (ZnF2), cadmium fluoride (CdF2), mercury fluoride (HgF2), aluminum fluoride (AlF3), gallium fluoride (GaF3), indium fluoride (InF3), tin fluoride (SnF2), lead fluoride (PbF2), lithium chloride (LiCl), sodium chloride (NaCl), potassium chloride (KCl), beryllium chloride (BeCl2), magnesium chloride (MgCl2), calcium chloride (CaCl2), strontium chloride (SrCl2), copper chloride (CuCl), silver chloride (AgCl), gold chloride (AuCl), zinc chloride (ZnCl2), cadmium chloride (CdCl2), mercury chloride (HgCl2), aluminum chloride (AlCl3), gallium chloride (GaCl3), indium chloride (InCl3), tin chloride (SnCl2), lead chloride (PbCl2), lithium bromide (LiBr), sodium bromide (NaBr), potassium bromide (KBr), beryllium bromide (BeBr2), magnesium bromide (MgBr2), calcium bromide (CaBr2), strontium bromide (SrBr2), copper bromide (CuBr), silver bromide (AgBr), gold bromide (AuBr), zinc bromide (ZnBr2), cadmium bromide (CdBr2), mercury bromide (HgBr2), aluminum bromide (AlBr3), gallium bromide (GaBr3), indium bromide (InBr3), tin bromide (SnBr2), lead bromide (PbBr2), lithium iodide (LiI), sodium iodide (NaI), potassium iodide (KI), beryllium iodide (BeI2), magnesium iodide (MgI2), calcium iodide (CaI2), strontium iodide (SrI2), copper iodide (CuI), silver iodide (AgI), gold iodide (AuI), zinc iodide (ZnI2), cadmium iodide (CdI2), mercury iodide (HgI2), aluminum iodide (AlI3), gallium iodide (GaI3), indium iodide (InI3), tin iodide (SnI2), lead iodide (PbI2), and a combination, and where the metal oxide is selected from cadmium oxide (CdO), indium oxide (In2O3), lead oxide (PbO), mercury oxide (HgO), magnesium oxide (MgO), gallium oxide (Ga2O3), aluminum oxide (Al2O3), zinc oxide (ZnO), silicon dioxide (SiO2), zinc oxysulfide, zinc oxyselenide, zinc oxysulfide selenide, indium phosphide oxide, indium phosphide oxysulfide, and a combination. The shell comprises a material having a composition different from the first semiconductor nanocrystal and having a bandgap which is larger than a bandgap of the first semiconductor nanocrystal. The nanoparticle further comprises a ligand compound coordinating a surface of the nanocrystal particle. The ligand compound comprises a compound represented by RCOOH, RNH2, R2NH, R3N, RSH, R3PO, R3P, ROH, RCOOR', RPO(OH)2, or R2P(O)OH, or a combination.R and R'=a 1-24C alkyl group, a 2-24C alkenyl group, and a 6-20C aryl group.Preferred Process: In synthesizing the nanocrystal particle, the first precursor comprises a metal selected from a Group II metal, a Group III metal, a Group IV metal, and a combination, where the metal is in a form of an elemental metal, an alkylated metal compound, a metal alkoxide, a metal carboxylate, a metal nitrate, a metal perchlorate, a metal sulfate, a metal acetylacetonate, a metal halide, a metal cyanide, a metal hydroxide, a metal oxide, a metal peroxide, or a combination, and where the second precursor comprises a Group V element, a Group VI element, a compound comprising the Group V element or the Group VI element, a compound comprising a halogen element, or a combination. The second precursor is a Group V element, a Group VI element, a compound comprising the Group V element or the Group VI element, or a combination, and is selected from sulfur (S), selenium (Se), selenide, tellurium, telluride, phosphorus (P), arsenic (As), arsenide, nitrogen (N), hexanethiol, octanethiol, decanethiol, dodecanethiol, hexadecanethiol, mercaptopropylsilane, sulfur-trioctylphosphine, sulfur-tributylphosphine, sulfur-triphenylphosphine, sulfur-trioctylamine, bis(trimethylsilyl)sulfide, ammonium sulfide, sodium sulfide, selenium-trioctylphosphine, selenium-tributylphosphine, selenium-triphenylphosphine, tellurium-tributylphosphine, tellurium-triphenylphosphine, tris(trimethylsilyl)phosphine, tris(dimethylamino)phosphine, triethylphosphine, tributylphosphine, trioctylphosphine, triphenylphosphine, tricyclohexylphosphine, arsenic oxide, arsenic chloride, arsenic sulfate, arsenic bromide, arsenic iodide, nitric oxide, nitric acid, ammonium nitrate, and a combination. The source of the halogen element is added in the first mixture in an amount of greater than or equal to 0.5 mol.%, based on a total moles of the metal of the first precursor. Contacting the source of the halogen element with the first mixture comprises dissolving the source of the halogen element in a carrier solvent to obtain a solution and adding the solution to the first mixture, and where the carrier solvent comprises water, a ketone, a primary amine, a secondary amine, a tertiary amine, a heterocyclic compound having a nitrogen atom, a 6-40C olefin, a 6-40C aliphatic hydrocarbon, a 6-30C aromatic hydrocarbon substituted with a 1-20C alkyl group, a primary, secondary, or tertiary phosphine substituted with a 6-22C alkyl group, a primary, secondary, or tertiary phosphine oxide substituted with a 6-22C alkyl group, an aromatic ether, an aromatic alcohol, or a combination. The solution has a molar concentration of the source of the halogen element of greater than or equal to 0.001 M. Preferred Device: The device is a light emitting diode, an organic light emitting diode, a sensor, a solar cell, an imaging sensor, or a liquid crystal display. Preferred Nanoparticle: In the nanoparticle, the halogen element comprises fluorine. EXAMPLE - No suitable example given.