NOVELTY - Manufacture of n-type interdigitated back contact silicon solar battery involves selecting n-type silicon substrate, removing damaged layer by chemical etching, carrying out phosphorus diffusion process, removing p+ region of phosphosilicate glass, removing diffusion layer by polishing the resultant product using organic alkaline solution, removing front surface of phosphosilicate glass using acid solution, removing back surface of n-type phosphosilicate glass, carrying out boron implantation process, forming oxide layer, depositing passivation layer and sintering.    USE - Manufacture of n-type interdigitated back contact silicon solar battery (claimed).    ADVANTAGE - The method provides n-type interdigitated back contact silicon solar battery by efficient process without n+/p+ isolation interface of back surface, without leakage of tunnel junction.    DETAILED DESCRIPTION - Manufacture of n-type interdigitated back contact silicon solar battery involves selecting n-type silicon substrate having resistivity of 3-12 ( Omega ).cm, removing damaged layer of the silicon surface by chemical etching, texturing the resultant product, carrying out double-sided phosphorus diffusion process, removing p+-region phosphosilicate glass by coating anticorrosive slurry or carrying out laser etching process, then removing p+/n+ diffusion layer by polishing the resultant product using organic alkaline solution, removing front surface of the phosphosilicate glass using acid solution at 25 degrees C for 5-20 minutes, controlling front surface side etching resistance to 100-200 ( Omega )/square, removing back surface of the n-type phosphosilicate glass, carrying out RCA-cleaning process, then carrying out boron implantation process on the n-type p+ region silicon substrate back surface with boron injection rate of 1x 1015-5x 1016 cm-3, annealing the resultant product at 900-1000 degrees C for 20-90 minutes, then forming oxide layer with thickness of 3-15 nm on the front surface of the n-type silicon substrate, depositing a passivation layer of silicon nitride, then removing passivation film from the back surface of the p-type contact region by coating process or laser etching process, coating metal paste on the n++/p++ regions of the back surface of n-type silicon substrate, and sintering the resultant product to form ohmic contact. The acid solution is mixed solution of hydrofluoric acid and nitric acid.