TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The catalyst is formed by exposing molybdenum oxide (2) to sulfur (3) in sulfur atmosphere (11), reducing portion or all portion on surface of molybdenum oxide, producing molybdenum disulfide (7), and fixing using fixing unit which oxidizes molybdenum (1) of base material, such that molybdenum oxide is produced. Molybdenum disulfide is made into microparticles and fixed using fixing unit, such that base material carries the molybdenum disulfide microparticles. Molybdenum disulfide microparticles are dissolved in alcohol, the alcohol is evaporated and aluminum surface is subjected to uniform dispersion using fixing unit, such that aluminum and molybdenum disulfide are pressed. The fixing unit carries out laser ablation, sputter, vacuum deposition, film-forming, press, thin film formation, oxidation baking, plasma processing and/or electron beam. While fixing molybdenum disulfide to base material, molybdenum disulfide is surface-treated. Preferred Composition: The compound (C1) is molybdenum disulfide, molybdenum carbide, molybdenum telluride, molybdenum oxide, molybdenum nitride, tungsten disulfide, niobium disulfide, tantalum disulfide, tungsten carbide, chromium carbide, zirconium carbide, boron carbide and vanadium carbide. The base material consists of molybdenum, molybdenum oxide, iron, copper, aluminum, cadmium, silicon, strontium and/or titanium, and is a substance which consists of source material(s) of semiconductor and photocatalyst, or nanopowder, electrode or nanocarbon. The nanopowder consists of molybdenum, molybdenum oxide and/or molybdenum disulfide. The nanocarbon consists of fullerene, 60C compound, carbon nanotube, carbon nanohorn, graphene, graphite carbon, nano diamond, nanoporous carbon and warped nano graphene. The base material is porous. The source material of semiconductor and photocatalyst is chosen from titanium dioxide, cadmium sulfide, tungsten oxide, silicon, silicon dioxide, germanium, selenium, zinc oxide, copper oxide, zinc selenide, bismuth selenide, silicon carbide, strontium titanate, aluminum nitride, gallium nitride, cadmium telluride, aluminum arsenide, cadmium arsenide, gallium arsenide, zinc sulfide, cadmium sulfide, indium phosphide, and boron phosphide.