NOVELTY - The method comprises: forming a leading edge (110) of a ribbon using radiative cooling on a surface (104) of a melt; drawing the ribbon in a first direction along the surface of the melt; removing heat radiated from the melt in a region adjacent to the leading edge of the ribbon by setting a temperature of a cold plate (106) proximate to a surface of the melt at a value of greater than 50 degrees C, which is below a melting temperature of the material; and setting a temperature at a bottom of the melt at a value of 1-3 degrees C, which is greater than the melting temperature.    USE - The method is useful for horizontal ribbon growth from a melt of material (claimed), where the ribbon is a silicon wafer or sheet that is useful in an integrated circuit or a solar cell.    ADVANTAGE - The method enables economic and reliable thin horizontal ribbon growth from the melt of material with uniform thickness and high quality thus improving efficiency of the solar cell.    DETAILED DESCRIPTION - The method comprises: forming a leading edge (110) of a ribbon using radiative cooling on a surface (104) of a melt; drawing the ribbon in a first direction along the surface of the melt; removing heat radiated from the melt in a region adjacent to the leading edge of the ribbon by setting a temperature of a cold plate (106) proximate to a surface of the melt at a value of greater than 50 degrees C, which is below a melting temperature of the material; setting a temperature at a bottom of the melt at a value of 1-3 degrees C, which is greater than the melting temperature; and providing the heat flow through the melt at a heat flow rate that is above that of an instability regime characterized by segregation of solutes during crystallization of the melt and is below a heat flow rate for stable isotropic crystal growth. The heat flow, through the melt, is represented by an equation as given in the specification, and is greater than 0.6 W/cm2. The forming step occurs in a first region of the melt. The ribbon has a first width along a second direction perpendicular to the first direction. The method further comprises drawing the ribbon along the first direction between the first region and a second region of the melt; and growing the ribbon using radiative cooling in the second region to a second width, which is greater than the first width, in the second direction.    DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a structure for horizontal ribbon growth.    Solid silicon ribbon (102)    Surface (104)    Cold plate (106)    Dotted line (108)    Leading edge. (110)