TECHNOLOGY FOCUS - ELECTRONICS - preferred Components: The photoelectric element comprises light-emitting diode, laser diode or light receiver.    TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The composition (c2) further comprises 3-10 pts. wt. reactant (g) comprising water and ammonium hydroxide. The inorganic filler comprises silicon oxide, aluminum hydroxide, magnesium hydroxide, magnesium carbonate and/or barium carbonate. The white pigment comprises titanium oxide, aluminum oxide, magnesium oxide, zirconium oxide, calcium carbonate, zinc sulfide and/or zinc oxide. The content of inorganic filler and white pigment in the molding composition is 30-84 wt.%, each based on the weight of the molding composition. The weight ratio of white pigment and inorganic filler is 0.1-0.5.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The composition (c1) further comprises 1-35 pts. wt. reactant (c) comprising anhydride, preferably succinic anhydride, maleic anhydride, phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride and/or methyl hexahydrophthalic anhydride. The equivalence ratio of anhydride group of reactant (c) and epoxy group of reactant (b) is 0.001-0.5. The reactant (a) is reaction product of composition (c2) comprising 1-10 pts. wt. reactant (d) having silicon-containing structure of formula: H-O-(Si(-R1)(-R1)-O)n-H (I), 100 pts. wt. reactant (e) comprising titanium alkoxide, zirconium alkoxide and/or zinc alkoxide, and 5-20 pts. wt. reactant (f) having silicon-containing structure of formula: R3-Si(-R2)(R2)-R2 (II). The reactant (e) comprises zirconium ethoxide, zirconium isopropoxide, zirconium n-propoxide, zirconium n-butoxide, zirconium tert-butoxide, zinc ethoxide, zinc isopropoxide, zinc n-propoxide, zinc n-butoxide, zinc tert-butoxide, titanium ethoxide, isopropanol titanium, titanium n-propoxide, titanium n-butoxide and/or titanium tert-butoxide. The reactant (f) comprises 2-(3,4-epoxycyclohexyl)-ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyl methoxydiethoxysilane, 3-glycidoxypropyl triethoxysilane, 3-methacryloxypropyl trimethoxysilane, 3-methacryloxypropyl triethoxysilane and 3-acryloxypropyl trimethoxysilane. The reactant (a) has silicon-containing structure of formula: Y'-O-(Si(-R1)(-R1)-O)n-Y' (III). The reactant (b) has silicon-containing structure of formula: R7-Si(-R1)(-R1)-O-(Si(-R1)(-R5)-O)c-(Si(-R6)(-R1)-O)d-Si(-R1)(-R1)-R7. The hardener is solid non-aromatic anhydride chosen from tetrahydrophthalic anhydride, hexahydrophthalic anhydride and maleic anhydride.R1=1-10C alkyl;n=4-31;R2=1-3C alkoxy;R3=3-12C epoxy group, 3-12C acrylate, 4-12C alkylacryloxy or 3-12C alkenyl;Y'=(MO4/2)l((MO)(4-a)/2M(OH)a/2)m(MO(4-b)/2M(O- Z)b/2)p;M=metal element;l=5-20;m=2-8;p=2-5;a=1-2;b=1-2;Z=SiR3(R4)2;R5=1-10C alkyl or phenyl;R6=epoxycyclohexylethyl or epoxycyclohexylpropyl;R7=1-10C alkyl, epoxycyclohexylethyl or epoxycyclohexylpropyl;c=1-150;andd=0-15.When d is more than 0, c/d is 1-10; and When d is 0, at least one R7 is epoxycyclohexylethyl or epoxycyclohexylpropyl.    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The reactant (b) comprises triglycidyl isocyanurate epoxy resin, hydrogenated epoxy resin, alicyclic epoxy resin and siloxane-modified resin, preferably siloxane-modified resin. The reactant (b) further comprises triglycidyl isocyanurate epoxy resin, hydrogenated epoxy resin and/or alicyclic epoxy resin. The molding composition further comprises additive comprising coupling agent and mold release agent. The molding composition comprises 11-55 wt.% organic-inorganic hybrid resin, 3-15 wt.% hardener and 0.55-1.5 wt.% additive, with respect to the weight of the molding composition. Preferred Properties: The reactant (a) has weight-average molecular weight distribution of 2500-7800 g/mol. The siloxane-modified resin has weight-average molecular weight of 400-10000. The organic-inorganic hybrid resin has melting point of more than 50 degrees C, and melt viscosity of 100-10000 mPa.second at 80-120 degrees C.