TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The first surface modification agent is selected from aluminum sec.-butoxide, diethylaluminum ethoxide, tris(ethylmethylamido)aluminum, triethylaluminum, triisobutylaluminum, trimethylaluminum, tris(diethylamido)aluminum, tris(ethylmethylamido)aluminum, trimethylarsine, diborane, trimethylboron, bis(N,N'-diisopropylacetaminato)cobalt (II), dicarbonyl(cyclopentadienyl)cobalt (I), (N,N'-diisopropylacetaminato)copper (II), bis(N,N'-di-tert.-butylacetamidinato)iron (II), triethylgallium, triisopropylgallium, trimethylgallium, tri(dimethylamido)gallium, tri-tert.-butylgallium, digermane, germane, tetramethylgermanium, hafnium (IV) tert.-butoxide, tetrakis(diethylamido)hafnium (IV), tetrakis(dimethylamido)hafnium (IV), tetrakis(ethylmethylamido)hafnium (IV), indium acetylacetonate, triethylindium, tris(N,N'-di-tert.-butylacetamidinato)lanthanum (III), bis(pentaethylcyclopentadienyl)magnesium, molybdenum hexacarbonyl, N,N-dimethylhydrazine, ammonia, azidotrimethylsilane, niobium (V) ethoxide, bis(methylcyclopentadienyl)nickel (II), phosphine, tert.-butylphosphine, tris(trimethylsilyl)phosphine, cyclopentadienyl(trimethyl)platinum (IV), bis(ethylcyclopentadienyl)ruthenium (II), trimethylantimony, tris(dimethylamido)antimony, 2,4,6,8-tetramethylcyclotetrasiloxane, dimethoxydimethylsilane, disilane, methylsilane, octamethylcyclotetrasiloxane, silane, tris(isopropoxy)silanol, tris(tert.-butoxy)silanol, tris(tert.-pentoxy)silanol, pentakis(dimethylamido)tantalum (V), tantalum (V) ethoxide, tris(diethylamino)(tert.-butylimido)tantalum (V), bis(diethylamido)bis(dimethylamido)titanium (IV), tetrakis(diethylamido)titanium (IV), tetrakis(dimethylamido)titanium (IV), tetrakis(ethylmethylamido)titanium (IV), titanium (IV) tert.-butoxide, vanadium (V) oxytriisopropoxide, bis(tert.-butylimido)bis(dimethylamido)tungsten (VI), tungsten hexacarbonyl, tris(N,N-bis(trimethylsilyl)amide)yttrium (III), yttrium (III) butoxide, diethylzinc, tetrakis(diethylamido)zirconium (IV), tetrakis(dimethylamido)zirconium (IV), tetrakis(ethylmethylamido)zirconium (IV), zirconium (IV) tert.-butoxide, and its mixture. The surface active agent further comprises a second surface modification agent selected from aluminum sec.-butoxide, aluminum tribromide, aluminum trichloride, diethylaluminum ethoxide, tris(ethylmethylamido)aluminum, triethylaluminum, triisobutylaluminum, trimethylaluminum, tris(diethylamido)aluminum, tris(ethylmethylamido)aluminum, trimethylarsine, diborane, trimethylboron, bis(N,N'-diisopropylacetaminato)cobalt (II), dicarbonyl(cyclopentadienyl)cobalt (I), (N,N'-diisopropylacetaminato)copper (II), bis(N,N'-di-tert.-butylacetamidinato)iron (II), gallium tribromide, gallium trichloride, triethylgallium, triisopropylgallium, trimethylgallium, tri(dimethylamido)gallium, tri-tert.-butylgallium, digermane, germane, tetramethylgermanium, hafnium (IV) chloride, hafnium (IV) tert.-butoxide, tetrakis(diethylamido)hafnium (IV), tetrakis(dimethylamido)hafnium (IV), tetrakis(ethylmethylamido)hafnium (IV), indium trichloride, indium(I) iodide, indium acetylacetonate, triethylindium, tris(N,N'-di-tert.-butylacetamidinato)lanthanum (III), bis(pentaethylcyclopentadienyl)magnesium, molybdenum hexacarbonyl, molybdenum (V) chloride, molybdenum (VI) fluoride, N,N-dimethylhydrazine, ammonia, azidotrimethylsilane, niobium (V) chloride, niobium (V) ethoxide, bis(methylcyclopentadienyl)nickel (II), phosphine, tert.-butylphosphine, tris(trimethylsilyl)phosphine, cyclopentadienyl(trimethyl)platinum (IV), bis(ethylcyclopentadienyl)ruthenium (II), trimethylantimony, tris(dimethylamido)antimony, 2,4,6,8-tetramethylcyclotetrasiloxane, dimethoxydimethylsilane, disilane, methylsilane, octamethylcyclotetrasiloxane, silane, tris(isopropoxy)silanol, tris(tert.-butoxy)silanol, tris(tert.-pentoxy)silanol, pentakis(dimethylamido)tantalum (V), tantalum (V) chloride, tantalum (V) ethoxide, tris(diethylamino)(tert.-butylimido)tantalum (V), bis(diethylamido)bis(dimethylamido)titanium (IV), tetrakis(diethylamido)titanium (IV), tetrakis(dimethylamido)titanium (IV), tetrakis(ethylmethylamido)titanium (IV), titanium (IV) bromide, titanium (IV) chloride, titanium (IV) tert.-butoxide, vanadium (V) oxytriisopropoxide, bis(tert.-butylimido)bis(dimethylamido)tungsten (VI), tungsten hexacarbonyl, tungsten (VI) chloride, tris(N,N-bis(trimethylsilyl)amide)yttrium (III), yttrium (III) butoxide, diethylzinc, tetrakis(diethylamido)zirconium (IV), tetrakis(dimethylamido)zirconium (IV), tetrakis(ethylmethylamido)zirconium (IV), zirconium (IV) bromide, zirconium (IV) chloride, zirconium (IV) tert.-butoxide, and its mixture. It also comprises a second surface modification agent selected from ammonia, phosphine, a halophosphine, alkylphosphine, a haloalkylphosphine, an alkylamine, moisture, and its mixture. The electrode further comprises a conductive filling selected from carbon black, carbon fiber, graphite, a metallic nano-powder, and its mixture.    TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The binder is polyvinylidene difluoride, copolymer of polyvinylidene difluoride and hexafluoropropylene, or its mixture.