NOVELTY - A polyimide precursor comprises a tetracarboxylic acid component including a norbornane-2-spiro- alpha -cyclopentanone- alpha '-spiro-2"-norbornane-5,5",6,6"-tetracarboxylic dianhydride having a peak area ratio at holding time 33.4-33.5 of 60% or more with respect to total peak area in gas chromatograph obtained by gas chromatography analysis using a solution of 0.25 g norbornane-2-spiro- alpha -cyclopentanone- alpha '-spiro-2"-norbornane-5,5",6,6"-tetracarboxylic dianhydride in 5 mL N,N-dimethylacetamide as measurement sample, and a diamine component.    USE - Polyimide precursor is used for manufacturing polyimide used in varnish for forming film used for display e.g. optical fiber and optical waveguide, touchscreen and substrate of solar cells (all claimed). Can also be used for inorganic transistor, organic transistor, flexible thin-film transistor, liquid crystal element for display devices, electroluminescent element, and photoelectric element.    ADVANTAGE - The polyimide precursor has high transparency and heat resistance, and provides polyimide with low linear thermal expansion coefficient at 400 degrees C or more. The polyimide enables formation of a fine circuit by easy process.    DETAILED DESCRIPTION - A polyimide precursor comprises a tetracarboxylic acid component including a norbornane-2-spiro- alpha -cyclopentanone- alpha '-spiro-2"-norbornane-5,5",6,6"-tetracarboxylic dianhydride having a peak area ratio at holding time 33.4-33.5 of 60% or more with respect to total peak area in a gas chromatograph obtained by gas chromatography analysis or its derivative, and a diamine component including diamine or its derivative. The gas chromatography analysis involves using a solution of 0.25 g norbornane-2-spiro- alpha -cyclopentanone- alpha '-spiro-2"-norbornane-5,5",6,6"-tetracarboxylic dianhydride in 5 mL N,N-dimethylacetamide as measurement sample, Rtx-5 Amine (RTM: Gas chromatography column) as column, and helium as carrier gas, where column is heated to 5-300 degrees C at rate of 10 degrees C/minute, flow rate of carrier gas of 10 mL/minute, sample injection-hole temperature is 290 degrees C, detector temperature is 310 degrees C, and sample injection rate is 1 mu L.