NOVELTY - Copper indium gallium (di)selenide (CIGS) thin film for solar panel construction is deposited which involves: (a) providing a first chamber; (b) providing a substrate and placing the substrate inside the first chamber; (c) providing a metallic target; (d) placing the metallic target inside the first chamber; (e) reducing pressure within the first chamber to a pressure of not less than 1x 10-6 torr; (f) adding sputtering gas into the first chamber after reducing pressure within the first chamber; (g) sputtering the elements and/or compounds from the metallic target to the substrate.    USE - The method is useful for depositing CIGS thin film for solar panel construction (claimed) used in solar cells or photovoltaic devices for converting sunlight directly into electrical power.    ADVANTAGE - Method and apparatus are provided for manufacturing CIGS thin films on a substrate to reduce production cost and production time of a solar cell, and to increase the quality of the CIGS thin film on substrate of solar cell. Additionally, the method and apparatus use a smaller production area to produce relatively larger solar cells; and can increase material utilization of all the constituents needed to fabricate CIGS thin films and solar cells.    DETAILED DESCRIPTION - Copper indium gallium (di)selenide (CIGS) thin film for solar panel construction is deposited which involves: (a) providing a first chamber; (b) providing a substrate and placing the substrate inside the first chamber; (c) providing a metallic target where the metallic target is made with elements and/or compounds selected from copper (Cu), copper-gallium (CuGa), indium (In), copper-indium (CuIn) and copper-indium-gallium (CuInGa); (d) placing the metallic target inside the first chamber; (e) reducing pressure within the first chamber to a pressure of not less than 1x 10-6 torr; (f) adding sputtering gas into the first chamber after reducing pressure within the first chamber to a pressure of not less than 1x 10-6 torr until the pressure in the chamber is increased to about less than or equal to 100 mtorr; (g) sputtering the elements and/or compounds from the metallic target to the substrate; (h) providing a second chamber; (i) transferring the substrate from the first chamber to the second chamber after the substrate is sputtered with the elements; (j) proving a selenium (Se) vapor into the second chamber; and (k) perform vapor deposition as to allow the Se to be deposited on the substrate.