NOVELTY - A doped silicon substrate (101) comprising a front, sunward facing surface (105) and rear surface (106) is provided, a silicon dioxide layer (l1) is formed on the substrate, a boron-containing doping paste is deposited on layer (l1), the silicon substrate is heated, and p+ region is formed. The layer (l1) is removed from the silicon substrate, a silicon dioxide layer (l2) is formed on the substrate, phosphorus-containing doping paste is deposited on layer (l2), and n+ region is formed, to form an interdigitated pattern of interdigitated back contact solar cell.    USE - Manufacture of interdigitated back contact solar cell (claimed).    ADVANTAGE - The method enables manufacture of efficient interdigitated back contact solar cell having high short circuit current, by reducing recombination loss, resistive loss and shading loss.    DETAILED DESCRIPTION - A doped silicon substrate comprising a front, sunward facing surface and rear surface is provided, a silicon dioxide layer (l1) is formed on front surface and rear surface of the substrate, a boron-containing doping paste is deposited on the silicon dioxide layer (l1) of rear surface in a pattern (p1), the silicon substrate is heated at ambient temperature (a1) to temperature (t1) for predetermined time (s1), to locally diffuse boron into the rear surface of silicon substrate, and p+ region is formed on rear surface of the silicon substrate. The silicon dioxide layer (l1) is removed from the silicon substrate, a silicon dioxide layer (l2) is formed on front surface and rear surface of the substrate, phosphorus-containing doping paste is deposited on the silicon dioxide layer (l2) of rear surface in a pattern (p2), silicon substrate is heated at ambient temperature (a2) to temperature (t2) for predetermined time (s2), to locally diffuse phosphorus into rear surface of the silicon substrate, n+ region is formed on rear surface of the silicon substrate, and silicon dioxide layer (l2) is removed from the silicon substrate, to form an interdigitated pattern of interdigitated back contact solar cell. The boron-containing paste comprises boron compound and solvent. The phosphorus-containing doping paste comprises phosphorus compound and solvent.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of interdigitated back contact solar cell.    Doped silicon substrate (101)    Boron emitter (102)    Front, sunward facing surface (105)    Rear surface (106)    Boron emitter metal contacts (107)