NOVELTY - The method involves placing a rinsed rear side passivated substrate in a phosphosilicate glass (PSG)/borosilicate glass (BSG) etch tank. Contact between the substrate and room temperature wet chemical growth (RTWCG) solution in the tank is allowed to facilitate growth of a front side oxide passivation layer with thickness of less than 50 nm, on a front side of the substrate and provide a front and rear side passivated substrate. The front and rear side passivated substrate is rinsed and dried using a rinse and dry station coupled to the tank.    USE - Method for facilitating fabrication of a semiconductor device i.e. solar cell (claimed), such as passivated emitter and rear solar cell (PERC), of a computer such as rack-mounted computer, desktop computer, laptop computer and tablet computer through RTWCG process using a junction isolation and phosphosilicate glass/borosilicate glass etch solar cell processing tool. Can also be used for a personal digital assistant (PDA) and a smart phone.    ADVANTAGE - The method enables fabricating high-efficient solar cells through RTWCG processes in a low-cost and easy-to-implement manner. The method enables coating the front surface with the oxide passivation layer over which silicon nitride layer is deposited to reduce optical losses and mitigate potential induced degradation (PID) effect, thus improving efficiency and operation stability of the semiconductor device. The method enables coating the rear surface of the semiconductor substrate with an oxide layer to passivate the rear surface of the device, thus increasing the device efficiency.    DETAILED DESCRIPTION - The RTWCG solution comprises first percentage of iodine containing compound, second percentage of fluoride containing acid, third percentage of non-oxidizing acid and fourth percentage of water. The iodine containing compound is selected from one of Iodic acid, hydrogen iodine, potassium iodine, Boron triiodide, Iodine Pentafluoride, silicon iodine, phosphatidylinositol 3-kinase, Diphosphorus Tetraiodide, Vanadium Iodide, Cobalt Iodide, Nickel(II) Iodide, arsenic triiodide, Tin(IV) Iodide, Tellurium iodide and lead iodide. The fluoride containing acid is selected from one of Hafnium, Hexafluorosilicic Acid, Ammonium Fluoride, Fluorotitanic acid and boron fluoride. The non-oxidizing acid is selected from one of hydrochloric acid, hydrogen iodide, hydrogen bromide, hafnium and Phosphoric Acid. The non-invasive additive is selected from one of Ammonium Fluoride, hafnium, hydrochloric acid, water, Nitric acid and Hydrogen peroxide. An INDEPENDENT CLAIM is also included for a semiconductor device.    DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a semiconductor device.    Silicon nitride layer (120)    Edge passivation layer (134)    Rear side passivation layer (136)    N-type phosphorus emitter region (140)    P-type region (160)