TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The content of oxide (B) in paste composition is 1-10 wt.%. The oxide (B) contains 25-72 wt.% cations of tellurium, 5-45 wt.% cations of boron, 0-30 wt.% cations of calcium, 0-30 wt.% cations of strontium, 0-30 wt.% cations of barium, 0-10 wt.% cations of magnesium, 0-25 wt.% cations of lithium, 0-25 wt.% cations of sodium, 0-10 wt.% cations of silicon, 0-12 wt.% cations of zinc, 0-10 wt.% cations of titanium, and oxides of aluminum, lithium, sodium, potassium, rubidium, cesium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, zirconium, niobium, silicon, molybdenum, hafnium, silver, gallium, germanium, indium, tin, antimony, selenium, ruthenium, bismuth, phosphorus, yttrium, lanthanum, and/or lanthanide elements, and incidental impurities. The total content of cations of alkaline-earth metal, boron, and tellurium in the oxide (B) is 70-95 wt.%. The total content of cations of barium, strontium, and calcium in the oxide (B) is more than 5 wt.%. The content of oxygen anions replaced by halogen anions in the oxide (B) is less than 10 wt.%. The source (A) is electroconductive metal powder containing silver. The content of silver in the electroconductive metal powder is 75-99 wt.% with respect to content of solids in the composition. The paste composition does not contain lead. The paste composition further contains an oxide additive chosen from oxides of aluminum, lithium, sodium, potassium, rubidium, cesium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, zirconium, niobium, silicon, molybdenum, hafnium, silver, gallium, germanium, indium, tin, antimony, selenium, ruthenium, bismuth, phosphorus, yttrium, lanthanum, and/or lanthanide elements, and a substance capable of forming oxide additive upon heating. The substrate has an insulating layer (30) provided on primary major surface. The insulating layer contains aluminum oxide, titanium oxide, silicon nitride, hydrogenated silicon nitride of formula: SiNx:H, silicon oxide, or silicon oxide/titanium oxide.x=not defined.N.B. x is not defined. Preferred Process: An electrical contact is formed between the electroconductive metal and the substrate by penetrating insulating layer and sintering electroconductive metal during the heating process.