TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Components: The electron contact layer is formed from a material selected from indium tin oxide, fluorine doped tin oxide, and aluminum doped zinc oxide and/or gadolinium oxide doped zinc oxide. The electron contact layer is associated to a substrate layer. The hole contact layer is made from a metal, such as gold and silver.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The interfacial agent is selected from benzoic acid and substituted benzoic acids, benzoic acids p-substituted with an electron withdrawing or electron donating group, benzoic acids p-substituted with group selected from R1, oxy group (-OR2), cyanide group (-CN) and trifluoromethyl group (-CF3). The pi -conjugated polymer is regioregular poly(3-hexylthiophene). The organic electron acceptor compound is selected from fullerene derivatives, such as (6,6)-phenyl-C61-butyric acid methyl ester (PCBM), (6,6)-phenyl-C70-butyric acid methyl ester (PC7OBM), indene-C60 bisadduct (ICBA), and bis(1-(3-(methoxycarbonyl)propyl)-1-phenyl)-(6.6)C62 (bis-PCBM). The anodic buffer layer is selected from poly(3,4-ethylenedioxy)thiophene (PEDOT) doped with p-styrenesulfonic acid (PSS), molybdenum trioxide, polyaniline, nickel dioxide, tungsten trioxide, and/or vanadium pentoxide. The zinc oxide precursor is selected from zinc salts and zinc complexes, such as zinc acetate, zinc formiate, zinc acetylacetonate, zinc alcoholate (such as methoxide, ethoxide, propoxide, isopropoxide and butoxide), zinc carbammate, zinc bis(alkylamide), zinc dialkyl or diaryl such as diethylzinc and diphenylzinc. The titanium oxide precursor is selected from titanium salts and titanium complexes such as titanium acetylacetonate, titanium alcoholate (such as methoxide, thoxide, propoxide, isopropoxide and butoxide), titanium carbammate, titanium bis(alkylamide), titanium dialkyl or diaryl (such as diethylzinc and diphenylzinc). The chelating ligand is selected from ethanolamine, diethanolamine and/or ethylendiamine. The organic solvent is selected from 1-10C alcohol, 2-6C alcohol having a boiling point of less than 100 degrees C and a viscosity of more than 3 mPas, and 2-6C alcohol having a boiling point of greater than or equal to 100 degrees C and a viscosity of less than or equal to 3 mPas.R1, R2 = 1-12C alkyl, preferably ethyl, propyl, n-butyl, i-butyl, t-butyl, hexyl, octyl or decyl.Preferred Process: The annealing step of the layer formed onto the aid electron contact layer is carried out by heating the layer at 50-200 degrees C, preferably 100-140 degrees C for 30 seconds to 2 hours, preferably 1 minute to 1 hour.