NOVELTY - The method involves applying encapsulating material to each of front and rear surfaces of a device (2501) to form a lamination. Pressure is applied to the lamination. The lamination is heated under illumination to bond the encapsulating material to the device, where the device is illuminated during a cooling step following the heating step. A crystalline silicon region of the device contains a hydrogen source and comprises atomic hydrogen contained interstitially within the crystalline silicon of the crystalline silicon region. The silicon region comprises a doped crystalline silicon region.    USE - Method for processing semiconductor devices e.g. high-efficiency solar cells and photovoltaic device.    ADVANTAGE - The device is illuminated during both the heating and cooling steps during the process that some of the deactivated dopant atoms are reactivated by heating and illuminating the doped region to break some of the dopant - hydrogen bonds while maintaining conditions, to create a high concentration of neutral hydrogen atoms and/or hydrogen atoms charged to the same charge state as the dopant atoms, so that some of the hydrogen drifts from the doped region without re-bonding to the dopant atoms and cooling the boron doped region while maintaining the illumination to maintain the high concentration of neutral hydrogen. The method enables controlling minority carrier concentrations through the use of light and heat during a cool-down period after heating, to maintain hydrogen charge states during cool-down to minimize reactivation of defects, or reactivation of dopants, to which hydrogen has previously bound. The method ensures that the release of hydrogen from the trapped states can be performed during the lamination process, where the lamination tool provides sufficient illumination intensities to increase the fractional concentrations hydrogen at temperature typically around 150 degrees Celsius, so that the illumination source is preferably pulsed to allow high illumination intensities to generate high concentrations of the minority hydrogen charge species whilst avoiding excessive temperature increases, thus allowing the hydrogen passivation to take place during the last thermal process, and hence avoiding the risk of the reactivation of defects during subsequent processes, and also avoiding issues associated with damage to the module performing thermal processes. The method enables achieving arc advantages by overdoping regions on the device, controlling active dopant concentration by deactivation and reactivation of dopants as required, and realizing dopant control in localized areas so as to create localized regions of varying active doping concentration and even varying polarity for selective emitters or isolation regions. The method enables deactivating over doped regions with hydrogen that can later be used as internal hydrogen sources for hydrogenation of defects so as to facilitate localized internal hydrogen sources for hydrogenation of localized defects or regions either during device fabrication or following device completion.    DETAILED DESCRIPTION - The doped crystalline silicon region is a surface region of the device. The doped crystalline silicon region is doped with a p-type (valency 3) dopant selected from boron, aluminum or gallium, and an n-type (valency 3) dopant, and phosphorus.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a laminator.    Semiconductor device (2501)    Glass topsheet (2502)    Bonding layer (2503)    Laminate (2507)    Upper housing (2514)