NOVELTY - The method comprises: (a) initiating a directional solidification silicon crystallization process using a predetermined amount of upgraded metallurgical-grade silicon feedstock material; (b) adding (74) 30-40 parts per million weight (ppmw) of germanium to the silicon feedstock material; (c) generating (78) a melt from respective silicon feedstock material and the quantity of germanium; and (d) performing crystallization of the melt. The method further comprises: (e) initiating a Czochralski silicon crystal pulling process using an electronic-grade (EG) silicon feedstock material.    USE - The method is useful for forming a crystalline silicon (claimed), which is useful in integrated circuits of solar cells.    ADVANTAGE - The method is capable of forming the crystalline silicon with improved mechanical and electrical characteristics and yield. The crystalline silicon improves efficiency and lifespan of the solar cells, and prevents wafer breakage in the integrated circuits.    DETAILED DESCRIPTION - The method comprises: (a) initiating a directional solidification silicon crystallization process using a predetermined amount of upgraded metallurgical-grade silicon feedstock material; (b) adding (74) 30-40 parts per million weight (ppmw) of germanium to the silicon feedstock material; (c) generating (78) a melt from respective silicon feedstock material and the quantity of germanium; and (d) performing crystallization of the melt. The method further comprises: (e) initiating a Czochralski (CZ) silicon crystal pulling process using an electronic-grade (EG) silicon feedstock material and a solar-grade silicon feedstock material; (f) initiating a floating zone (FZ) silicon crystallization process using an EG silicon supply rod; and (g) adding a mixture of germanium and gallium to the silicon feedstock material. The germanium has a purity level of 99.999% and a concentration of 10-40 ppmw. The step (b) includes adding germanium to a silicon-germanium alloy (SixGe(1-x)), where x is 0-1. The mixture of germanium and gallium has a concentration of 0-10 ppmw.    DESCRIPTION OF DRAWING(S) - The diagram shows a flow diagram of a method for employing higher-grade raw silicon feedstock for a CZ silicon crystal pulling process.    Placing EG silicon into a crucible (72)    Adding germanium to the silicon feedstock material (74)    Heating the solid mixture for generating a melt (76)    Generating a melt from respective silicon feedstock material and the quantity of germanium (78)    Pulling CZ crystal from the melt to form crystal. (80)