NOVELTY - Electroless deposition of aluminum-doped zinc oxide thin film, involves immersing non-conductive flexible substrate in acetone solution and then ultrasonically-cleaning to obtain clean and flexible substrate, immersing in sensitizing solution including tin chloride and hydrochloric acid to obtain sensitized flexible substrate, immersing in activator solution including palladium chloride and hydrochloric acid to obtain activated flexible substrate, immersing in growth solution, depositing aluminum-doped zinc oxide film on substrate, and rinsing, and drying.    USE - The method is useful for electroless deposition of aluminum-doped zinc oxide thin film, which is useful in photovoltaic applications.    ADVANTAGE - The method enables electroless deposition of aluminum-doped zinc oxide thin film at high temperature and pressure in an energy-efficient and simple manner.    DETAILED DESCRIPTION - Electroless deposition of aluminum-doped zinc oxide thin film, involves immersing non-conductive flexible substrate in acetone solution and then ultrasonically-cleaning for 10-20 minutes, rinsing the substrate with deionized water, drying to obtain clean and flexible substrate, immersing clean and flexible substrate in sensitizing solution including 20-60 g/l tin chloride and 0.12-0.36 mol/l hydrochloric acid at room temperature for 30-60 minutes to obtain sensitized flexible substrate, immersing sensitized flexible substrate in activator solution including 0.05-0.2 g/l palladium chloride and 0.12-0.36 mol/l hydrochloric acid for 30-60 minutes at room temperature to obtain activated flexible substrate, immersing activated flexible substrate in growth solution at 60-90 degrees C for 1.5-3 hours, depositing aluminum-doped zinc oxide film on the substrate, and finally rinsing with deionized water, and drying. The growth solution includes zinc nitrate having a concentration of 0.01-0.1 mol/l, aluminum nitrate having concentration of 0.0005-0.1 mol/l and dimethylamino borane having concentration of 0.01-0.03 mol/l.