TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The metal oxide is chosen from alumina, silica, zirconia, titania, tin oxide, cerium oxide, zinc oxide, magnesium oxide, calcium oxide, strontium oxide, barium oxide, sodium oxide, boron trioxide, manganese oxide, yttria and tungsten oxide.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The precursor used to form low temperature atomic layer deposition is chosen from tri-methyl-aluminum, methyl-pyrrolidine-tri-methyl-aluminum, ethyl-pyridine-triethyl-aluminum, ethyl-pyridine-dimethyl-aluminum hydride, aluminum triisopropylate, silicon tetrachloride, tetrakis-ethyl-methyl-amino-silicon, titanium tetrachloride, titanium-tetrakis-isoproproxide, tetrakis-ethyl-methyl-amino-titanium, tetrakis-dimethyl-amino-titanium, tetrakis-diethyl-amino-titanium, tetrakis-ethyl-methyl-amino-hafnium, tetrakis-ethyl-methyl-amido-zirconium, tetrakis-dimethyl-amino-hafnium, tetrakis-dimethyl-amino-zirconium, tetrakis-diethyl-amino-hafnium, tetrakis-diethyl-amino-zirconium, hafnium tetra-tert-butoxide, zirconium tetra-tert-butoxide, hafnium tetrachloride, barium acetylacetonate, strontium acetylacetonate, bisdipivaloylmethanato barium, bisdipivaloylmethanato strontium, bishexafluoroacetylacetonato barium, bis(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate)barium, bis(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate)strontium, (2,2,6,6-tetramethyl-3,5-heptanedionato)barium tetraglyme adduct, bis(2,2,6,6-tetramethyl-3,5-heptanedionato)strontium tetraglyme adduct, titanium ethylate, titanium tetraisopropoxide, titanium(IV)t-butoxide, lead acetylacetonate, bishexafluoroacetylacetonato lead, bisdipivaloylmethanato lead, lead tetraethyl, lanthanum(III) acetylacetonate, lanthanum(III) hexafluoroacetylacetonate, lanthanum(III) trifluoroacetylacetonate, zirconium (IV) t-butoxide, zirconium (IV) hexafluoroacetylacetonate, zirconium (IV) trifluoroacetylacetonate, pentakis(diethylamido)tantalum, pentakis(ethylmethylamino)tantalum, pentakis-dimethylamino tantalum, tantalum(V) fluoride, tert-butylimidotris (diethylamido)tantalum, tertiary-butyl imido tris-ethylmethylamino tantalum, bis(2,2,6,6-tetramethyl-3,5,heptanedionato)bis(isopropoxy)titanium, bis(2,2,6,6-tetramethyl-3,5,heptanedionato)bis(isopropoxy)zirconium, bis(2,2,6,6-tetramethyl-3,5,heptanedionato)bis(methoxyethoxy)titanium, and lead (1,1,1-trifluoro-4-oxopent-2-en-olate).    TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The porous polymer material is chosen from polyethylene, high-density polyethylene, low-density polyethylene, linear low-density polyethylene, high-molecular weight polyethylene, polypropylene terephthalate, polyethylene terephthalate, polybutylene terephthalate, polyester, polyacetal, polyamide, polycarbonate, polyimide, polyether ether ketone, polyethersulfone, polyphenylene oxide, polyphenylene sulfide and polyethylene naphthalate. Preferred Process: The manufacture of high-heat resistant separation membrane further involves introducing a hydrophilic functional group chosen from hydroxyl group and carboxylic acid group to the surface of porous polymer material before forming metal oxide thin film.