NOVELTY - The transistor (100) has a gate resistor (105) that is electrically coupled between a gate terminal (110) and a gate electrode terminal (111) of a discrete semiconductor transistor. A primary load terminal (112) is provided to be different from the gate terminal. A secondary load terminal (113) is provided to be different from the gate terminal. The resistance of the gate resistor at a temperature of -40 degrees C is greater than at the temperature of 150 degrees C. The temperature coefficient of the resistance satisfies specific expression. The resistance of the gate resistor is in specific range.    USE - Discrete semiconductor transistor such as insulated gate bipolar transistor, FET, junction FET and metal oxide semiconductor FET (MOSFET) for semiconductor module (claimed) in switches in power supplies and power converters, electric cars, air-conditioners, inverter in motor drives.    ADVANTAGE - The voltage margin between the specified breakdown voltage and overvoltage occurring during turn-off operation over specified operation temperature range is improved without deteriorating switching loss. The safety of operating the discrete semiconductor transistor is improved by counteracting or avoiding undesired electric breakdown caused by overvoltage during transistor turn-off. The undesired hot-spot generation during transistor operation is counteracted or avoided since decrease of the gate sub-resistor with increasing temperature leads to reduction of switching losses of the group of transistor cells driven through the respective gate sub-resistor by sub-dividing the transistor cells into groups and driving gates of the transistors cells of the groups by different gate sub-resistors. The uniformity of the temperature distribution is improved by setting gate sub-resistor for driving transistor cells in the chip center to smaller values than the gate sub-resistor for driving transistor cells in the chip edge.    DESCRIPTION OF DRAWING(S) - The drawings show a schematic view of the discrete semiconductor transistor and a graphical representation illustrating the characteristics of collector current and collector-emitter overvoltage versus time during turn-off of insulated gate bipolar transistor. (Drawing includes non-English language text)    Discrete semiconductor transistor (100)    Gate resistor (105)    Gate terminal (110)    Gate electrode terminal (111)    Primary load terminal (112)    Secondary load terminal (113)