TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The step (i) comprises (a) preparing zinc oxide pellets; (b) placing the disc-shaped green zinc oxide in a sintering furnace, and zinc oxide at 1130-1170 degrees C for 1.5-2.5 hours, naturally cooling the sintering furnace to below 100 degrees C, to obtain zinc oxide ceramic disc having cross-sectional diameter of 10-12 mm and thickness of 1-1.4 mm; (c) placing zinc oxide-ceramics wafer in silver electrode, to obtain zinc oxide-ceramic wafer surface silver electrodes; and (d) uniformly coating the zinc oxide-ceramic wafer surface silver electrodes and the outer surface of three silver pieces using a paste, and drying silver paste. The step (a) further comprises (a1) measuring purity of 100 g zinc oxide powder, and placing zinc oxide powder with zirconia balls into a ball mill, adding deionized water into ball mill, milling zinc oxide powder for 18-22 hours, to obtain zinc oxide powder, where mass ratio of zinc oxide powder, zirconia balls and deionized water is 1:2.5-3.5:0.25-0.75; (a2) placing milled zinc oxide powder in an electric oven, and drying at 90-110 degrees C, to obtain dry zinc oxide powder; and (a3) adding a binding agent into zinc oxide powder, washing, granulating, and tableting, to obtain green pellet zinc oxide having cross-sectional diameter of 12-14 mm and thickness of 2-3 mm, where the binding agent used is 1 wt.% polyvinyl alcohol. The step (ii) comprises (e) coating high temperature resistant outer surface temperature leads silver thrice at 1000 degrees C, placing silver paste applied to a high-temperature wire in an oven after each completion of coating process, and completely drying the high temperatures silver paste, and then smearing below, until the completion of three times of silver paste application; and (f) placing the high temperature lead in the sintering furnace, sintering at 500-600 degrees C for 25-35 minutes, to obtain a thermoelectric power line current test carried out at 1000 degrees C, and wrapping the outer surface of silver electrodes. The step (iii) comprises (g) taking upper surface of the surface silver electrode containing zinc oxide ceramic wafer, where the lower surface potential temperature difference between the current test lines are connected to one terminal microampere table, and the microamps table accuracy is 0.01 mu A; and (h) taking two sheets of alumina single crystal, fixing the single crystal alumina two sheets to the surface of wafer placed on the surface of silver-containing zinc oxide ceramic electrode, where the lower surface of zinc oxide ceramic discs silver electrode, and thin alumina single crystal and the temperature difference between the potential of the current test line to form a whole, constituting the device under test, where the alumina single crystal flakes length-width-height is 10x 10x 1 mm. The step (iv) comprises covering the lower surface of metal plate subjected to heating test device with copper metal plate having a thickness of 0.8-1.2 mm, where the heating device power is 1-3 kW of heating resistance wire, temperature control system used is KSJ temperature control system, and adding cold water into cooling device, and circulating cold water into a pipe, where the flow of cold water inside the cold water pipe is 0.5-1 l/minute, and the diameter of cold water pipe flat metal tube is 10 mm. The step (v) comprises (i) starting the heating device and cooling device; (j) starting the operation of heating device and cooling device, where the heating device utilizes a resistive heater, heating using heating resistance wire, where device under test under surface temperature has high temperature side, and heating the heating resistance wire, where the KSJ temperature control system and heating resistor wire are connected to the lower surface of a real-time detection test temperature, and circulating cold water into cold water pipe in the cooling device, where the cold water pipe is attached to the upper surface of the test body, and measuring the body temperature by circulating cold water into the cold water pipe located on the treated surface, and cooling to room temperature, and measuring the multi-meter test function test body lower surface temperature, to form low temperature side, and treated heating device and cooling device, where the temperature difference between the upper and lower surfaces of the device under test. The step (vi) comprises taking zinc oxide as an n-type semiconductor to detect intrinsic point defects of the point defects primarily donor-based using an electron carrier to form a point defect ionization, measuring the surface heat treated surface temperature of the surface silver electrode containing-zinc oxide ceramic wafer formed higher temperature side, and forming on lower temperature side with surface temperature, and maintaining carrier concentration of the higher temperature side and low temperature side larger than the carrier concentration, and allowing the penetration of low temperature side into a concentration gradient driver download carrier, to obtain high-temperature side and low-side charge with dissimilar charge, to form a thermoelectric power, where the thermoelectric power current test line has surface containing zinc oxide ceramic circular silver electrode connected to upper and lower surface sheet under thermoelectric power, driving circuit by thermoelectric power for 30 minutes, reading and recording current direction microammeter for 10 seconds, and recording once in every 30 minutes, and recordings micro readings and current direction table each time for 1 minute. The zinc oxide ceramic point is determined by taking surface of the silver electrode zinc oxide formed within the ceramic discs from high end point of the current low end, when the carrier used is a cation, and the end point will be formed from the low temperature side of the inner surface of the current silver electrode containing zinc oxide ceramic discs, when the carrier used is an electron, where the cation and electron temperature difference the potential of the current direction of the opposite, and therefore judged according to current direction zinc oxide ceramic wafer surface silver electrodes obtained thermoelectric power current are cationic form or electronic form, where the single carrier absolute thermoelectric power rate based on semiconductor theory, is expressed in formula as given in the specification. The step (viii) comprises determining zinc oxide ceramics from low temperature side end point by detecting current direction, so as to obtain current potential driven thermoelectric power electron drift current-based, so the temperature difference between the potential of the current activation energy is equal to the ionization energy of point defects, point defects can obtain further information on the structure of the current activation energy by thermoelectric power measurements in formula as given in the specification.