NOVELTY - An apparatus comprises air-tight, one-piece, unitary, integral chamber (1) in which water-cooled crucible (3) is located in said air-tight, one-piece, unitary, integral chamber, inductor coil (4) is located in air-tight, one-piece, unitary, integral chamber and surrounding water-cooled crucible, 1st movable structure (5) is located in said air-tight, one-piece, unitary, integral chamber, 1st melting space (18) is formed by water-cooled crucible and 1st movable structure, and charging bin (2) has exit portion extending into air-tight, one-piece, unitary integral chamber.    USE - Apparatus for production of multicrystalline silicon ingot by induction (claimed) used for manufacture of solar cells.    ADVANTAGE - Apparatus has improved production capacity. Multicrystalline silicon ingot produced by apparatus reduces cost of solar cells.    DETAILED DESCRIPTION - An apparatus comprises air-tight, one-piece, unitary, integral chamber (1) in which water-cooled crucible (3) is located in said air-tight, one-piece, unitary, integral chamber, inductor coil (4) is located in air-tight, one-piece, unitary, integral chamber and surrounding water-cooled crucible, 1st movable structure (5) is located in said air-tight, one-piece, unitary, integral chamber, 1st melting space (18) is formed by water-cooled crucible and 1st movable structure, charging bin (2) has exit portion extending into air-tight, one-piece, unitary, integral chamber and is located and configured to download lump silicon charge material (8) into 1st melting space, movable, start-up heating device (7) is located in air-tight, one-piece, unitary, integral chamber and configured to be inserted into 1st melting space for melting lump silicon charge material under influence of radiated heat and electromagnetic field generated by inductor coil, movable, start-up heating device is conductive material, 1st movable rod (6) is extended into said air-tight, one-piece, unitary, integral chamber, 1st movable rod is connected to 1st movable structure for moving 1st movable structure vertically in said air-tight, one-piece, unitary, integral chamber, controlled cooling compartment (9) is located in said air-tight, one-piece, unitary, integral chamber beneath water-cooled crucible, 1st heating equipment (10) is located in controlled cooling compartment, 1st movable structure is configured to move vertically along 1st heating equipment set, 2nd movable structure (12) is located in said air-tight, one-piece, unitary, integral chamber, 2nd melting space is formed by water-cooled crucible and 2nd movable structure, charging bin has exit portion extending into said air-tight, one-piece, unitary, integral chamber and is located and configured to download lump silicon charge material into 2nd melting space, movable, start-up heating device is located in said air-tight, one-piece, unitary, integral chamber and configured to be inserted into 2nd melting space for melting lump silicon charge material under influence of radiated heat and electromagnetic field generated by inductor coil, 2nd movable rod is extended into said air-tight, one-piece, unitary, integral chamber, 2nd movable rod (13) is connected to 2nd movable structure for moving said 2nd movable structure vertically in said air-tight, one-piece, unitary, integral chamber, 2nd heating equipment (11) is set in controlled cooling compartment, heating equipment sets are mounted on platform (14) in controlled cooling compartment located in said air-tight, one-piece, unitary, integral chamber beneath water-cooled crucible, rotatable axle (15) is located between in 1st and 2nd heating equipment sets in said air-tight, one-piece, unitary, integral chamber, platform is configured to rotate at 180 degrees around axle, discharge device (16) is connected to air-tight, one-piece, unitary, integral chamber through a gas seal (17), multicrystalline silicon ingot (20) is steadily moved downwardly into controlled cooling compartment towards associated heating equipment set in which controlled cooling is provided by increasing surface temperature of multicrystalline silicon ingot at output of water-cooled crucible from 900-1150 degrees C to 1200-1250 degrees C at output of upper zone of controlled cooling compartment, and multicrystalline silicon ingot is cooled with thermal gradient of not greater than 10 degrees C/cm to remove thermal stresses. An INDEPENDENT CLAIM is included for production of multicrystalline silicon ingot by induction which involves charging and start-up heating lump silicon charge material in controlled atmosphere on 1st movable structure in 1st melting space of water-cooled crucible, creating bath of molten silicon, melting and casting molten silicon to shape of 1st melting space, crystallizing multicrystalline silicon ingot, controllably cooling multicrystalline silicon ingot in which melting and casting processes are terminated if content of impurities in molten silicon is critical, moving multicrystalline silicon ingot steadily downwardly into controlled cooling compartment toward 1st heating equipment set in which controlled cooling is provided and thermal stresses are removed, evacuating silicon ingot with 1st movable structure and 1st heating equipment set, cooling, rotating 2nd heating equipment set and 2nd movable structure on platform into vacated space, moving 2nd movable structure into water-cooled crucible, and repeating steps to produce next ingot.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of an apparatus for melting and casting processes in production of multicrystalline silicon ingot.    Air-tight, one-piece, unitary, integral chamber (1)    Charging bin (2)    Water-cooled crucible (3)    Inductor coil (4)    1st movable structure (5)    1st movable rod (6)    Movable, start-up heating device (7)    Lump silicon charge material (8)    Controlled cooling compartment (9)    1st heating equipment (10)    2nd heating equipment (11)    2nd movable structure (12)    2nd movable rod (13)    Platform (14)    Rotatable axle (15)    Discharge device (16)    Gas seal (17)    1st melting space (18)    Multicrystalline silicon ingot (20)