NOVELTY - Hydrogen is introduced into sputtering atmosphere, and a layer (L1) of hydrogenated aluminum-doped zinc oxide material is deposited. A layer (L2) of aluminum-doped zinc oxide is deposited by passing hydrogen gas to obtain hydrogenated aluminum-doped zinc oxide/aluminum-doped zinc oxide composite transparent conductive film. The film is subjected to wet etching using dilute hydrochloric acid to obtain hydrogenated aluminum-doped zinc oxide/aluminum-doped zinc oxide composite transparent conductive front electrode on glass or polyimide substrate.    USE - Preparation of hydrogenated aluminum-doped zinc oxide/aluminum-doped zinc oxide composite transparent conductive front electrode used for amorphous silicon, amorphous silicon-germanium, microcrystalline silicon, amorphous silicon/microcrystalline silicon and amorphous silicon/amorphous silicon-germanium/microcrystalline silicon thin-film solar cell (claimed).    ADVANTAGE - The method provides hydrogenated aluminum-doped zinc oxide/aluminum-doped zinc oxide composite transparent conductive front electrode having broad spectrum characteristics, transmittance of more than 75% at wavelength of 400 nm, and average transmittance of more than 80% at wavelength of 400-1100 nm. The solar cell formed using the electrode has excellent efficiency and stability.    DETAILED DESCRIPTION - Preset amount of hydrogen is introduced into sputtering atmosphere, and a layer (L1) of hydrogenated aluminum-doped zinc oxide material is deposited. A layer (L2) of aluminum-doped zinc oxide is deposited by passing hydrogen gas to obtain hydrogenated aluminum-doped zinc oxide/aluminum-doped zinc oxide composite transparent conductive film. The film is subjected to wet etching using dilute hydrochloric acid to obtain hydrogenated aluminum-doped zinc oxide/aluminum-doped zinc oxide composite transparent conductive front electrode on glass or polyimide substrate. The hydrogenated aluminum-doped zinc oxide/aluminum-doped zinc oxide composite transparent conductive front electrode has zinc oxide and aluminum oxide as target material. The sputtering atmosphere is argon gas.