NOVELTY - The manufacturing method involves doping rear surface (106) of substrate (101) homogeneously with boron in blanket pattern to form p+ region on rear surface of silicon substrate, forming silicon dioxide layer on front surface (105) and rear surfaces of substrate, and depositing phosphorus-containing doping paste consisting of phosphorus compound and solvent on rear surface in second pattern. The silicon substrate is heated in ambient to temperature and for time period to locally diffuse phosphorus into rear surface of silicon substrate, thus forming n+ region on rear surface of substrate.    USE - Manufacturing method for interdigitated back contact solar cell.    ADVANTAGE - Enables higher short circuit current and thus efficiency since front, sunward side is therefore free from shading losses. The front surface no longer needs heavily diffused layer optimized for metal contact, but instead is optimized to create front surface field (FSF) which minimizes recombination losses at the front surface thus increasing the open circuit voltage and thus efficiency. Allows for wider metal which reduces resistive losses since metal geometry is no longer constrained to minimize shading losses by having meta contacts on the rear side. Simplifies integration of solar cells into module by having all metal contacts on the back side. Minimizes recombination losses since FSF repels minority carriers from the front surface. Obtains maintaining localized doping and eliminating autodoping by introducing protective silicon dioxide layer on the silicon wafer surface prior to applying patterned doping source layer. The silicon dioxide layer enables localized doping and eliminates autodoping. The insulator regions allow metal busbars of opposite polarity to that of the underlying doped region to traverse overtop these regions and avoid electrical shunt path and thus allow carriers to be extracted from the solar cell. The addition of relatively small shear force overcomes the hydrostatic interaction and thus tends to reduce the viscosity of fluid. Some of the oxide materials in contact with silicon at elevated temperature get reduced introducing impurities into the wafer.    DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of an interdigitated back-contact solar cell.    Substrate (101)    Boron emitter (102)    FSF (104)    Front surface (105)    Rear surface (106)