TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Compositions: Interstitial layer is cesium carbonate, zinc oxide (ZnO), or self-assembled molecules. Substrate is piezoelectric material, indium tin oxide (ITO) glass, plastic, or cloth. Preferred Parameters: Active layer has thickness of 200-500 nm. Anodic layer has thickness of 100 nm to 1.26 mu m, preferably 1 mu m. Preferred Processes: The method further includes dissolving greater than or equal to 1 constituent of indium tin oxide coating, active layer, interstitial layer, and/or anodic layer with a strong, dominant solvent and a poor solvent or greater than or equal to 1 electrolytes e.g. sodium chloride (NaCl), potassium nitrate (KNO3), magnesium chloride (MgCl2), sodium acetate (CH3COONa), chloric acid (HClO3), calcium chloride (CaCl2), lithium bis(trimethylsilyl)amide (((CH3)3Si)2NLi), sodium nitrate (NaNO3), copper sulfate (CuSO4), potassium chloride (KCl), magnesium nitrate (Mg(NO3)2), lithium chloride (LiCl), sodium carbonate (Na2CO3), potassium carbonate (K2CO3), calcium carbonate (CaCO3), sodium bicarbonate (NaHCO3), ammonium acetate (NH4C2H3O2), silver nitrate (AgNO3), ammonium nitrate (NH4NO3), iron trichloride (FeCl3), perchloric acid (HClO4), hydrogen iodide (HI), hydrogen bromide (HBr), hydrochloric acid (HCl), sulfuric acid (H2SO4), nitric acid (HNO3), bromic acid (HBrO3), perbromic acid (HBrO4), periodic acid (HIO4), fluoroantimonic acid (HSbF6), fluorosulfuric acid-antimony pentafluoride (FSO3H-SbF5), carborane acid (H(CHB11Cl11)), FSO3H, trifluoromethane sulfonic acid (CF3SO3H), potassium hydroxide (KOH), barium hydroxide (Ba(OH)2), cesium hydroxide (CsOH), sodium hydroxide (NaOH), strontium hydroxide (Sr(OH)2), calcium hydroxide (Ca(OH)2), rubidium hydroxide (RbOH), magnesium hydroxide (Mg(OH)2), lithium diisopropylamide (C6H14LiN), sodium amide (NaNH2), and/or sodium hydride (NaH).    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Processes: Organic inverted photovoltaic cell is encapsulated by applying UV-cured epoxy encapsulant or silver paint to the edges of the cell. The method further includes cleaning substrate with acetone and isopropanol before applying the photoresist, etching substrate after applying photoresist, and cleaning etched substrate by sonicating etched substrate in greater than or equal to 1 cleaning solution and ozone-cleaning etched substrate. Sonicating step includes sonicating etched substrate with trichloroethylene at 50 degrees C for 20minutes, sonicating etched substrate with acetone at 50 degrees C for 20 minutes, and sonicating etched substrate with isopropanol at 50 degrees C for 20 minutes. The method further includes thermal annealing substrate on hotplate at 130 degrees C for 20 minutes after applying interstitial layer, drying substrate under petri dish for 30 minutes, and drying substrate on hotplate at 110 degrees C for 10 minutes after applying active layer. Spray coating of substrate with modified PEDOT is repeated, and each layer of modified PEDOT is allowed to dry before the next layer is applied. The method further includes annealing device at 120 degrees C for 20 minutes after spray coating. Preferred Conditions: Etching is completed using solution of 20% HCl/7% HNO3 at 130 degrees C. Spray coating is completed using airbrush having pressure setting of 10-30 psi. Spray coating is completed while substrate is on a hotplate heated to 90-100 degrees C.    TECHNOLOGY FOCUS - POLYMERS - Preferred Compositions: Modified PEDOT solution is prepared by adding 5-8 vol.% dimethyl sulfoxide (DMSO) to solution of undiluted PEDOT:PSS.