NOVELTY - Silicon wafer is subjected to oxidation treatment, and pure nitrogen gas is passed to silicon wafer. Oxygen gas is passed to silicon wafer, and mixed gas containing chloroacetyl chloride and nitrogen is passed to silicon wafer. Liquid nitrogen and oxygen gas are passed to the silicon wafer, hydrogen gas is passed, and mixed gas containing chloroacetyl chloride is passed to silicon wafer. Nitrogen gas is passed and mixed gas containing oxygen and chloroacetyl chloride is passed to the silicon wafer, cooled, pure nitrogen is passed to silicon wafer and silicon wafer is processed.    USE - Silicon wafer diffusion process used for manufacturing solar cell (claimed).    ADVANTAGE - The method enables efficient diffusion of silicon wafer with high flux with high productivity. The silicon wafer diffusion process prevents the sticking phenomenon of silicon wafer.    DETAILED DESCRIPTION - Silicon wafer is subjected to oxidation treatment at 750 degrees C, pure nitrogen is passed to silicon wafer for 5 minutes at a flow rate of 6 L/minute, temperature is increased to 750-1100 degrees C for 50 minutes. Oxygen gas is passed to the silicon wafer at a flow rate of 6 L/minute, and a mixed gas containing chloroacetyl chloride and nitrogen is passed to the silicon wafer for 15 minutes. Liquid nitrogen is passed at a flow rate of 150 cc/minute to silicon wafer, maintained at 1100 degrees C, oxygen is passed to the silicon wafer at a flow rate of 5.2 L/minute, hydrogen gas is passed at a flow rate of 8 L/minute, and mixed gas containing chloroacetyl chloride is passed at a flow rate of 150 cc/minute, and processed for 3.5-4.5 hours. Nitrogen gas is passed at a flow rate of 150 cc/minute at 1100 degrees C and mixed gas containing oxygen at flow rate of 6 L/minute and chloroacetyl chloride at a flow rate of 150 cc/minute is passed to the silicon wafer for 20 minutes, cooled to 750 degrees C, pure nitrogen at a flow rate of 6 L/minute is passed to silicon wafer and silicon wafer is processed.