NOVELTY - The method involves providing a semiconductor growth substrate. A sequence of layers of semiconductor material forming a solar cell is deposited on growth substrate. A metal contact layer is applied over sequence of layers. The adhesive polyimide surface of a permanent supporting substrate is affixed directly over metal contact layer and permanently bonding it by a thermocompressive technique. The semiconductor growth substrate is removed subsequent to affixing the adhesive polyimide surface of a permanent supporting substrate directly over metal contact layer.    USE - Method of manufacturing solar cell.    ADVANTAGE - The back surface field (BSF) layer reduces recombination loss at the backside of the solar subcell A and thus reduces the recombination in the base. Since the surface topography affects the bulk properties of the semiconductor material as it grows and the layer becomes thicker, the use of the surfactants minimizes threading dislocations in the active regions, and thus improves overall solar cell efficiency. The advantage of utilizing a constant band gap material such as InGaAlAs is that arsenide-based semiconductor material is much easier to process in standard commercial metal organic chemical vapor deposition (MOCVD) reactors, while the small amount of aluminum assures radiation transparency of the metamorphic layers. The subcells are interconnected in circuits using these additional terminals such that most of the available photogenerated current density in each subcell is used effectively, leading to high efficiency for the multi junction cell, notwithstanding that the photogenerated current densities are typically different in the various subcells.    DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a metamorphic multijunction solar cell.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the solar cell.    Contact layer (104)    Window layer (105)    Metal contact layer (123)    Arc layer (130)    Entire channel (510)