NOVELTY - The device has semiconductor structure that is formed upon the first predetermined portion and a second predetermined portion that is made up of vertically aligned quantum structures separated by barrier layers, in which second predetermined portion is formed upon the vertically aligned quantum structures and barrier layers. A second wurtzite semiconductor is made up of group III element constituent of the first wurtzite semiconductor.    USE - Broadband semiconductor nanowire devices. Uses include but are not limited to solid-state lighting, solar cell, flat panel displays, and direct integration to photonic and electronic circuits used in various applications.    ADVANTAGE - The presence of magnesium can greatly reduce the nanowire nucleation time and enhance the growth rate on the nonpolar surfaces, which provides wires with increased diameters and reduced lengths. The resulting thin, approximately nanometers, Indium Gallium Nitride barrier layers can enhance the hole injection and transport in the quantum dot active region, thus, leading to more uniform hole distribution, reduced electron leakage, and enhanced internal quantum efficiency at relatively high current levels. Maintains the high efficiency at relatively high injection levels, i.e., to minimize or eliminate any efficiency drop, to achieve high luminous efficacy. The vertically stacked array of quantum dot heterostructures, made up of N elements, acts as multi-element photovoltaic increasing the efficiency, and thus allowing both efficient hydrogen generation under low illumination conditions and a reduction in complexity through reducing the requirements for solar collector optics.    DETAILED DESCRIPTION - The first wurtzite semiconductor and the second wurtzite semiconductor are the same compound semiconductor but doped such that one is either p-type or n-type and the other is the other of p-type and n-type. The first wurtzite semiconductor is selected from the group made up of gallium nitride, indium nitride and aluminum nitride. The quantum structure is made up of at least one of a binary, a ternary and a quaternary semiconductor alloy of gallium, aluminum, indium, and nitrogen, and at least one of a binary, a ternary and a quaternary semiconductor alloy of gallium, aluminum, indium, and phosphorous.    DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view of the indium nitride nanowire solar cells indium nitride    First solar cell (1600A)    Second solar cell (1600B)    Third solar cell (1600C)    Nickel/gold contact (1610)    Polyimide (1630)