NOVELTY - Manufacture of group-III nitride crystal (1003) involves forming a primary group-III nitride crystal by liquid phase growing method, and forming a secondary group-III nitride crystal (1004) on the primary group-III nitride crystal by vapor growth method. The primary group-III nitride crystal is formed by selecting several portions of group-III nitride as seed crystal (1003a), contacting the surface of seed crystal with alkali metal melt, generating group-III nitride crystal, and growing the generated crystal as primary group-III nitride crystal.    USE - Manufacture of group-III nitride crystal used for semiconductor device (claimed) e.g. power device and high-frequency device. Uses include but are not limited to optical disk, display, illumination, fluorescent lamp, solar cell, and mobile telephone.    ADVANTAGE - The method enables efficient manufacture of group-III nitride crystal with high quality, and reduced defects such as distortion, dislocation, and curvature.    DETAILED DESCRIPTION - Manufacture of group-III nitride crystal involves forming a primary group-III nitride crystal by liquid phase growing method, and forming a secondary group-III nitride crystal on the primary group-III nitride crystal by vapor growth method. The primary group-III nitride crystal is formed by selecting several portions of group-III nitride as seed crystal for growing the group-III nitride crystal, contacting the surface of seed crystal with alkali metal melt in atmosphere containing nitrogen, reacting group-III element and nitrogen in the alkali-metal melt, generating group-III nitride crystal, and growing the generated crystal as primary group-III nitride crystal by group-III nitride crystal liquid phase growth process. The group-III nitride crystal liquid phase growth process is performed by combining the several group-III nitride crystals grown from the seed crystals. An INDEPENDENT CLAIM is included for group-III nitride crystal manufacturing apparatus.    DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view explaining manufacture of group-III nitride crystal.    Substrate (1002)    Group-III nitride crystal (1003)    Seed crystal (1003a)    Secondary group-III nitride crystal (1004)