NOVELTY - Preparation of gamma -copper iodide nano wire involves washing template with 1 mol% copper iodide-acetonitrile solution, fixing pre-processed template to bottom of high temperature and high pressure sealed container, setting pressure value of high pressure inert gas by gas pressure regulator, removing excess gamma -copper iodide from surface of template, placing polished sample in phosphoric acid solution, repeatedly washing the removal of template of gamma -copper iodide nano wire with ethanol and deionized water, finally dry-preserving at 40-80 degrees C for 30-120 minutes.    USE - Preparation of gamma -copper iodide nano wire e.g. P-type semiconductor gamma -copper iodide nano wire used in organic chemical catalysis, solar energy battery and LED.    ADVANTAGE - The method enables manufacture of nano wire with precise size. The preparation method is simple to implement with low cost.    DETAILED DESCRIPTION - Preparation of gamma -copper iodide nano wire, involves washing template with 1 mol% copper iodide acetonitrile solution with ultrasonic waves for 10 minutes, placing template in drying oven at 80 degrees C, fixing pre-processed template to bottom of high temperature and high pressure sealed container, adding copper iodide or doped high-purity copper iodide powder to high temperature and high pressure sealed container with suction of mechanical pump, closing vacuum valve and vacuum mechanical pump when vacuum degree of high temperature and high pressure sealed container is higher than 5 Pa, providing high temperature and high pressure sealed container with vacuum into cylindrical heating high temperature furnace at 600-680 degrees C at heating rate of 1 degrees C/minute, melting copper iodide powder by raising the temperature for 10-50 minutes, completely immersing template in copper iodide liquid, setting pressure to 0.5-10 MPa of pressure value of high pressure inert gas by gas pressure regulator, opening pneumatic valve of high temperature and pressure sealed container, slowly filling with high pressure inert gas, maintaining copper iodide liquid under high pressure for 10-100 minutes from template surface into template of nano aperture, maintaining high pressure inert gas, setting high temperature furnace to slow down, maintaining temperature is in 0.5 degrees C/minute when cooling rate is higher than 550 degrees C, when cooling rate is less than 550 degrees C, closing high pressure inert gas valve after temperature is reduced to room temperature, emptying the high temperature and high pressure sealed container filled with high-pressure inert gas, removing template of gamma -copper iodide after curing, performing polishing, removing excess gamma -copper iodide from surface of template, placing polished sample in 5 mol% phosphoric acid solution with temperature of 30-80 degrees C for 5-24 hours, repeatedly washing the removal of template of gamma -copper iodide nano wire with ethanol and deionized water, finally dry-preserving after placed in 40-80 degrees C for drying in 30-120 minutes.