TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The step of forming the copper compound coating layer is performed by incorporating the silicon in a solution containing the copper compound. The step of forming the copper silicide is performed in mixed gas atmosphere containing hydrogen. The hydrochlorination is carried out without addition of catalyst; and is carried out at 300-800 degrees C and pressure of 1-50 bar. The copper silicide is formed on surface of the silicon. The step of heat treating is performed at 300-800 degrees C and pressure of 1-20 bar. Preferred Components: The mixed gas includes less than or equal to 10 wt.% of hydrogen and remainder of inert gas. The copper compound includes CuCl, CuCl2, Cu2O, CuO, and/or Cu.    TECHNOLOGY FOCUS - METALLURGY - Preferred Components: The silicon is metallurgical silicon (MG-Si) having average particle size of 10-500 mu m.    TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The solution includes solvents selected from methanol, ethanol, isopropanol, and butanol. EXAMPLE - About 0.85 g CuCl2 in an amount of 0.23 wt.% relative to the weight of Si based on the weight of Cu in CuCl2 were dissolved in 100 ml of anhydrous ethanol to obtain a solution (s1). A metallurgical silicon (MG-Si) with a purity of greater than or equal to 99% and an average particle size of 250 mu m was mixed with the solution (s1). The solvent was removed from the mixed solution using a rotary evaporator, to obtain CuCl2 coating layer on the surface of Si. Subsequently, the temperature was elevated to 400 degrees C at a rate of 4 degrees C/minute in a mixed gas atmosphere containing hydrogen and nitrogen at a wt. ratio of 1:9. The Si having the coating layer was maintained at 400 degrees C for 1 hour, and then cooled to room temperature, thus obtaining MG-Si having Cu-silicide formed on it. In a fixed bed reactor, 170 g of the MG-Si having Cu-silicide formed on it was placed, after which hydrochlorination was carried out for 2-10 hours under conditions of a temperature of 525 degrees C, a pressure of 20 barG, and a molar ratio of H2 to SiCl4 of 2:1, to obtain trichlorosilane.