NOVELTY - The thin film transistor (TFT) has a source drain pattern that comprises a source electrode connected to a semiconductor layer and a drain electrode separated from the source electrode. The semiconductor layer comprises a source portion that contacts the source electrode. The semiconductor layer comprises a drain portion that contacts the drain electrode. The semiconductor layer comprises a channel portion that is located between the source and drain portions. A gate electrode (200) is connected with the source electrode. A polymer substrate (100) comprises a thermoplastic polymer film.    USE - Indium gallium zinc oxide TFT for use as a backplane for an LCD display and a solar cell device in a mobile phone, a computer and a TV.    ADVANTAGE - The TFT utilizes dry carbon dioxide for removing stress in the TFT so as to allow proceeding with lift off without the danger of cracking the polymer substrate. The TFT utilizes a methylsiloxane film as a gate dielectric to exhibit better stability on thermal changes during fabrication processes and reduce tendency to crack upon heating. The TFT comprises a photoresist film with thickness within the preferred ranges such that removal of the film is easier by the dry etching process instead of using a wet chemical stripper, which can damage the substrate. The TFT can make the alignment marks on the substrate for aligning with the subsequent layers like source/drain pattern and channel island, where the alignment marks are aligned in a Centro-symmetric manner to increase the precision in aligning the respective parts of the TFT so as to increase quality of the manufactured TFTs. The TFT ensures that a hard coat layer is made of mentioned ionizing radiation curing resins, thermosetting resins, thermoplastic resins and engineering plastics, Ionizing radiation curing resins arc as the materials can be easily formed into films on plastic base films and easily provide the desired high pencil hardness values.    DETAILED DESCRIPTION - The gate electrode and the source electrode are made of a material selected from one of aluminum, titanium, molybdenum, aluminum neodymium, a stack metal electrode and transparent conducting oxide selected from a group consisting of indium tin oxide, indium doped zinc oxide, aluminum doped zinc oxide, fluorine tin oxide and antimony tin oxide. The semiconductor channel layer comprises a metal oxide semiconductor that is made of oxide selected from one of hydrogen fluoride, indium, gallium or zinc. An INDEPENDENT CLAIM is also included for a method for producing an indium gallium zinc oxide (IGZO) TFT on a polymer substrate.    DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of an indium gallium zinc oxide TFT.    Polymer substrate (100)    Adhesion layer (150)    Gate electrode (200)    Gate insulating film (300)