TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The composition (C1) further comprises: 0.5-10 wt.% a third, volatile solvent; and an antioxidant comprising N,N-diethylhydroxylamine, ascorbic acid, hydrazine, hexamine, and/or phenylenediamine. The composition (C1) has a viscosity of 50-25000 cps, preferably 100-10000 cps at 25 degrees C. The composition (C2) further comprises the antioxidant. Preferred Components: In the composition (C1), the conductive particles: have a size in any dimension of 5 nm to 1 mu and are comprised of at least one metal comprising aluminum, copper, silver, gold, nickel, palladium, tin, platinum, lead, zinc, bismuth, and/or their alloys, where at least some particles of the conductive particles are surface passivated to reduce oxidation, or passivated with at least a partial coating comprising benzotriazole, zinc phosphate, zinc dithiophosphate, tannic acid and/or hexafluoroacetylacetone; or have a size in any dimension of 5 nm to 1.5 mu and are comprised of a semiconductor, where each particle of the conductive particles further comprises a doped semiconductor having a dopant comprising boron, arsenic, phosphorus and/or gallium, each particle of the conductive particles comprises at least one semiconductor comprising silicon, gallium arsenide, gallium nitride, gallium phosphide, indium aluminum gallium phosphide, aluminum indium gallium arsenide, indium gallium indium gallium nitride arsenide and/or aluminum indium gallium antimonide, and each particle of the conductive particles comprises at least one semiconductor comprising silicon and/or germanium, titanium dioxide, silicon dioxide, zinc oxide, indium-tin oxide and/or antimony-tin oxide; II-VI semiconductors (which are compounds of at least one divalent metal (zinc, cadmium, mercury and lead) and at least one divalent non-metal (oxygen, sulfur, selenium, and tellurium) such as zinc oxide, cadmium selenide, cadmium sulfide and/or mercury selenide), III-V semiconductors (which are compounds of at least one trivalent metal (aluminum, gallium, indium, and thallium) with at least one trivalent non-metal (nitrogen, phosphorus, arsenic, and antimony) such as gallium arsenide and/or indium phosphide), and group IV semiconductors including hydrogen terminated silicon, carbon, germanium, and/or alpha-tin. The conductive particles of composition (C1): are comprised of metal particles and semiconductor particles, each having a size in any dimension of 5 nm to 200 nm; or are comprised of metal particles and semiconductor particles, each having a size in any dimension of 1-20 mu . In the composition (C1), each particle of the conductive particles comprises an alloy of a metal and a semiconductor, where the metal comprises at least one metal comprising aluminum, copper, silver, gold, nickel, palladium, tin, platinum, lead, zinc, bismuth and/or their alloys, and the semiconductor comprises at least one semiconductor comprising silicon, gallium arsenide, gallium nitride, gallium phosphide, indium aluminum gallium phosphide, aluminum indium gallium arsenide, indium gallium indium gallium nitride arsenide and/or aluminum indium gallium antimonide. In the composition, the metallic particles have a size in any dimension of 5 nm to 1 mu . In the composition (C2), each particle of the metallic particles further comprises an alloy of a metal and a semiconductor, where each alloyed metal and semiconductor nanoparticle of the metallic particles is of 1-8 mu and comprises an alloy of at least one metal and at least one semiconductor, where the semiconductor comprises at least one semiconductor comprising silicon, gallium arsenide, gallium nitride, gallium phosphide, aluminum indium gallium arsenide, indium gallium indium gallium nitride arsenide and/or aluminum indium gallium antimonide, and the semiconductor further comprises a dopant comprising boron, arsenic, phosphorus and/or gallium. In the composition (C2), each particle of the metallic particles comprises at least one metal comprising aluminum, copper, silver, gold, nickel, palladium, tin, platinum, lead, zinc, bismuth and/or their alloys. In the composition (C2), at least some particles of the metallic particles are passivated with at least a partial coating comprising benzotriazole, zinc phosphate, zinc dithiophosphate, tannic acid, and/or hexafluoroacetylacetone. EXAMPLE - No suitable example given.