Prazo para submissão: 16 December 2024
Data de Notificação: 01/04/2025
Editora: Elsevier
Revista: Power Electronic Devices and Components
Link: https://www.sciencedirect.com/special-issue/305981/proceedings-of-gan-marathon-2024
Detalhes:
GaN devices are creating a revolution in several fields. Power GaN FETs are ideal for efficient power conversion, and are competing with silicon and SiC in several fields, including power supplies, automotive, server/datacenters, wireless chargers, LiDARs, and audio amplifiers. High speed RF devices are finding wide application in 5G communications, high-frequency radars, satellites. Visible (InGaN-based) and ultraviolet (AlGaN-based) light emitters are fundamental for lighting application, proj